| PART |
Description |
Maker |
| 2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
HIGH SPEED MEDIUM POWER NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
HIGH SPEED/ MEDIUM POWER/ NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
Supercapacitor; Capacitance:0.68F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin
|
Central Semiconductor Corp
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| TM20DA-H TM20DA-M |
MEDIUM POWER GENERAL USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TM55CZ-H TM55CZ-M TM55DZ-H TM55DZ-M |
MEDIUM POWER GENERAL USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TM150SA-6 |
MEDIUM POWER GENERAL USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2N6705 |
General Purpose Medium Power Amplifier
|
CDIL
|
| TM60SA-6 |
MEDIUM POWER GENERAL USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RM20TPM-M RM20TPM-H |
MEDIUM POWER GENERAL USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RM100DZ-2H RM100DZ-24 RM100CZ-24 RM100CZ-2H |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TM20DA-H TM20DA-M |
THYRISTOR MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM100D2Z-40 |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| NTE2347 |
Silicon NPN Transistor General Purpose, Medium Power
|
NTE[NTE Electronics]
|
| TM55DZ-M TM55CZ-H TM55CZ-M |
THYRISTOR MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
